METHOD FOR CLEANING WAFER SURFACE

摘要

PROBLEM TO BE SOLVED: To provide a method for easily removing contaminating impurities adhered to a wafer and clean the surface thereof. SOLUTION: This method is designed to remove contaminating impurities adhered to the surface of a wafer and clean the surface thereof, and it includes such a heating step for heating the wafer in an oxidizing atmosphere that converts the contaminating impurities into oxide or hydroxide and eliminates them. The oxidizing atmosphere may be a dry oxidizing atmosphere containing an O2 gas or a pyro oxidizing atmosphere. The temperature of heating is 300 deg.C or higher.