METHOD FOR PRODUCING A MICROELECTRONIC STRUCTURE

摘要

The invention relates to a method for producing a microelectronic structure. A layer structure (30) partially covers a substrate (5) and is provided with at least one first conductive layer (15, 20) which extends to a side wall (35) of the layer structure (30). Said layer structure (30) is covered by a second conductive layer (45) that is subsequently etched back to the greatest possible extend by means of an etching process involving physical ablation, whereby ablated material is deposited on the side wall (35) of the layer structure (30) . The ablated material forms a protective layer (60) on the side wall (35). The first conductive layer (15, 20) is protected from an oxygen attack by said protective layer (60) to the greatest possible extend.