| 摘要 |
PROBLEM TO BE SOLVED: To form a source and drain region before forming a gate and form a gate ferroelectric film self-alignedly against the source and drain region. SOLUTION: Ions are implanted with a dammy gate electrode formed right on a channel formation region of a semiconductor substrate 1 as a mask to form a source and drain region 5 self-alignedly against the dummy gate electrode. After a first interlayer insulating film 6 is formed over the entire surface, the first interlayer insulating film 6 is flattened to expose the surface of the dummy gate electrode. Then, the dummy gate electrode and a protective oxide film 3 are removed to form a trench 7. After a buffer dielectric film 8, a ferroelectric film 9, and gate electrode material 10 are deposited in order over the entire surface, these films and material are patterned to form a gate. |
