| 摘要 |
PROBLEM TO BE SOLVED: To easily manufacture a capacitor having single-crystal SrRuO3/single- crystal (Ba, Sr) TiO3/single-crystal SrRuO3 structure which is connected to an n+ source diffusion layer through a plug electrode of Ru. SOLUTION: A single-crystal SrRuO3 film which is a lower part capacitor electrode can be easily formed to manufacture a capacitor of this structure. For that purpose, a plug electrode 10 comprising an Ru film with a recess on its surface is formed, the inside of the recess is buried with a single-crystal SrRuO3 film 11, an amorphous SrRuO3 film 14 which is to be a lower part capacitor electrode is deposited over the entire surface of the SrRuO3 film 11, and, using the single-crystal SrRuO3 film 11 as a crystal nucleus, the amorphous SrRuO3 film is crystallized in thermal treatment. |
