| 摘要 |
PROBLEM TO BE SOLVED: To remove metallic contaminant and particles without generating irregularities incident to dissolution of a material on the surface of a semiconductor substrate by cleaning the surface of a semiconductor subjected to chemical mechanical polishing using a semiconductor substrate cleaning liquid containing specified quantity of oxidizing agent and chelate. SOLUTION: The semiconductor substrate cleaning liquid comprises an oxidizing agent and a chelate, more preferably comprises an aqueous solution containing an oxidizing agent and a chelate. The oxidizing agent includes inorganic peroxides, e.g. hydrogen peroxide, ozone or hydrochlorous acid, and hydrogen peroxide is especially preferable. Concentration of the oxidizing agent is 0.1-60 wt.%, preferably 0.5-30 wt.%, in total solution. The chelate includes ethylenediamine tetraacetate EDTA, hydroxyethyl ethylenediamine tetraacetate DHEDDA and the concentration thereof is normally 0.01-5 wt.%, preferably 0.05-3 wt.%, in total solution.
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