| 摘要 |
PROBLEM TO BE SOLVED: To obtain crystalline SnO2 and CuO with stoichiometric composition and fine structure at a low substrate temperature by sputtering Sn and Cu or their oxide with an argon ion beam and at the same time generating high- concentration oxygen plasma for deposition. SOLUTION: By supplying argon from an argon supply source 9 to a main ion gun 2, a target 5 that is composed of Sn or its oxide and Cu or its oxide is sputtered by an acceleration voltage of 0.5-2.0 keV and an ion current of 0.5-5 mA/cm2. Then, oxygen is supplied from an oxygen supply source 10 to an auxiliary ion gun 3 for generating plasma and is accelerated toward a substrate 4 with an acceleration energy of 0-500 eV, and then a shutter 6 is opened when the oxygen becomes stable, and a thin film is formed by a desired thickness. Then, heat treatment is made at 350 deg.C or higher at least for two hours to improve cystallinity and the stability of the thin film.
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