发明名称 SEMICONDUCTOR DEVICE, MANUFACTURE AND MOUNTING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To reduce transmission loss of high frequency signal in a semiconductor device having a mounting structure employing an anisotropic conductive sheet. SOLUTION: In a semiconductor device arranged to connect a semiconductor pellet 10 and a substrate 30 through an anisotropic conductive sheet 20, a low permittivity region 24 is formed by hollowing out a region of the anisotropic conductive sheet 20 corresponding to a transmission line 14 for connecting the circuit block 11 in the semiconductor pellet 10 with the input and output pads 12, 13 so that the passage of the transmission line 14 is surrounded by the low permittivity region 24 comprising the cavity when the assembly is completed. According to the arrangement, transmission loss of high frequency signal on the transmission line 14 caused by high permittivity of the anisotropic conductive sheet 20 can be reduced.
申请公布号 JP2000252322(A) 申请公布日期 2000.09.14
申请号 JP19990053763 申请日期 1999.03.02
申请人 HITACHI LTD 发明人 IMAI KAZUO
分类号 H01L23/12;H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L23/12
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