SEMICONDUCTOR DEVICE AND POWER CONVERTER USING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce field strength on a termination surface with hardly affecting the on-state characteristic. SOLUTION: A drift layer has a double layer structure made up of an (n) layer 12 and an (n-) layer 13, and a termination region is formed on a surface of the (n-) layer 13. These (n) and (n-) layers 12 and 13 have an impurity ratio of 1:2 or below, and the (n-) layer 13 is smaller in thickness than a source (n+) layer. Then, reliability can be ensured even in high temperatures.