| 摘要 |
PROBLEM TO BE SOLVED: To provide a breakdown withstanding semiconductor device with good breakdown withstanding strength even when an electric charge like sodium ion is attached to an outer side of an insulating film. SOLUTION: A breakdown withstanding semiconductor device includes a first diffusion layer 23 and a second diffusion layer 24 with a space in between on an upper face of a semiconductor substrate 21, a first insulating film 26 formed between the first and second diffusion layers 23 and 24 at an upper part of the semiconductor substrate 21, a shield film 28 obtained from a conductive film and formed on the first insulating film 26, and a second insulating film 29 formed on the shield film 28.
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