发明名称 SYSTEM AND METHOD FOR ANALYZING DEFECT OF SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a system for analyzing defect of semiconductor which can guarantee the effectiveness of a possible solution for defect-derived degradation of yield and make easier defect occurring factor estimation based on the defects formed on a wafer. SOLUTION: A system for analyzing defect of semiconductor is provided with a probable detect calculating section 8 which finds the number of probable detects from the defective size distribution on a semiconductor wafer and the design data of a semiconductor device formed on the wafer, an estimated defect calculating section 6 which finds the number of estimated defects by classifying the electric defective pattern of the semiconductor device, and a checking section 7 which corrects the defective size distribution so that the number of probable defects may become coincident with the number of estimated defects. The reliability of the number of probable defects is improved by evaluating the propriety of the defective size distribution.
申请公布号 JP2000252341(A) 申请公布日期 2000.09.14
申请号 JP19990056128 申请日期 1999.03.03
申请人 TOSHIBA CORP 发明人 ARITAKE TOSHIYUKI;TSUMURA KAZUHIRO
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址