| 摘要 |
PROBLEM TO BE SOLVED: To provide a new technique performing extrinsic gettering by using a collapse impulsive force of cavitation air bubbles. SOLUTION: This manufacturing method is that of a semiconductor wafer having a cavitation gettering site on the rear in which the gettering site 3 capable of gettering impurities in semiconductor by repeating high temperature heat treatment and cooling treatment is formed. By a means which jets a fluid jet flow in liquid and cavitation is generated around the jet flow, or a means for generating cavitation by using ultrasonic wave, cavitation air bubbles are generated. On the rear of a semiconductor wafer 1 whose surface is made an element forming region 2, the cavitation air bubbles are collapsed. By the collapse impulsive force of air bubbles, a working strain layer such as dislocation, working strain and residual stress modification and/or oxide stacking fault are imparted without generating damage and corrosion on the rear of the semiconductor wafer.
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