| 摘要 |
<p>PROBLEM TO BE SOLVED: To stably manufacture electron emitting elements with uniform characteristics by changing the flow of gas to a substrate in the gas atmosphere, during the activation process of the electron emitting elements. SOLUTION: This manufacturing device of electron source comprises a diffusion gas source 112, a mass flow controller 113 for controlling the flow rate of the diffusion gas, a diffusion gas feed port 105, and a stop valve 114. The diffusion gas feed port 105 has a drive mechanism that is a second gas inlet port for changing the gas flow, and it is arranged within a vacuum vessel 103. A mixed gas, consisting of an organic material gas and a carrier gas, is introduced into the vacuum vessel 103 and supplied to an area including an electron emission part to activate the electron emission part. The resulting gas is evacuated through an evacuation port 117 by a vacuum pump 119. A diffusion gas consisting of an inert gas, such as nitrogen, is non-continuously blown against a desired electron emission part by a drive mechanism to diffuse the gas having etching effect that is generated by the activation, and the partial pressure is uniformized to suppress the dispersion of characteristic of electron emission elements.</p> |
