| 摘要 |
PROBLEM TO BE SOLVED: To improve exposure process in throughput, when a mark detecting system which detects a mark on a reticle stage through an overhead illumination method is provided. SOLUTION: Through this exposure method in an exposure process, a reticle 3 on a reticle stage 35 is scanned with respect an exposure light illuminating region 63, by which the pattern of the reticle 3 is transferred onto a wafer. A reference plate 31 is arranged on the reticle stage 35, evaluation marks 70A and 70B whose bases are shaded by shading members 32R and 32L are previously formed on the reference plate 31, and movable objective optical systems 24R and 24L are moved to a measurement position in parallel with a wafer replacement and alignment operation, the evaluation marks 70A and 70B are detected by reticle alignment systems 61R and 61L through a reflected illumination method, and focusing is carried out. Thereafter, the positions of the reticle marks 64A and 64B are detected by the reticle alignment systems 61R and 61L, and a reticle alignment is carried out. |
