发明名称 |
MOS CAPACITOR AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a MOS capacitor and the integrated circuit device of a voltage controlled oscillator(VCO) that can vary a wide-range of frequency using the MOS capacitor and can be easily integrated. SOLUTION: In a variable-capacity capacitor, a MOS capacitor is subjected to VCO configuration, where it has a conductor layer 53 that becomes one electrode via a capacity insulation film 54 on a first conductivity type semiconductor region 51 that becomes the other electrode and has a second conductivity type impurity region 52 near a surface close to a region that opposes the conductor layer 53 of the first-conduction-type semiconductor substrate 51.
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申请公布号 |
JP2000252480(A) |
申请公布日期 |
2000.09.14 |
申请号 |
JP19990345483 |
申请日期 |
1999.12.03 |
申请人 |
INTERCHIP KK |
发明人 |
KAMIYA MASAAKI;SAITO YUTAKA |
分类号 |
H01L27/04;H01L21/822;H01L29/94;H03B5/32;H03H17/00;(IPC1-7):H01L29/94 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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