发明名称 MAGNETO-RESISTANCE EFFECT SENSOR AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To actualize the improvement of magnetic recording density reducing the thickness of a readout element by eliminating the need to use an antiferromagnetic film and to secure sufficient insulation from a shield, by making a simple alteration to the constitution of a antiferromagnetic coupling layer used as a pinned layer as to the magneto-resistance effect sensor and its manufacture. SOLUTION: A hard ferromagnetic layer 1, an antiferromagnetic coupling spacer layer 4, a fixed soft ferromagnetic layer 2, a nonmagnetic spacer layer 5, and a free soft ferromagnetic layer 3 are stacked in order. Then the antiferromagnetic coupling spacer layer 4 interposed between the hard ferromagnetic layer 1 and fixed soft ferromagnetic layer 2 separates the hard ferromagnetic layer 1 and fixed soft ferromagnetic layer 2 and couples their magnetism directions in an antiparallel direction. Further, the soft ferromagnetic layer 2 has its magnetism direction fixed to an external magnetic field within the range of the coercive force of the hard ferromagnetic layer 1, and the nonmagnetic spacer layer 5 interposed between the fixed soft ferromagnetic layer 2 and free soft ferromagnetic layer 3 separates the fixed soft ferromagnetic layer 2 and free soft magnetic layer 3.
申请公布号 JP2000251224(A) 申请公布日期 2000.09.14
申请号 JP19990054899 申请日期 1999.03.03
申请人 FUJITSU LTD 发明人 SHIMIZU YUTAKA;NAGASAKA KEIICHI
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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