| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for crystal growth to obtain an epitaxially grown layer with excellent uniformity within a surface. SOLUTION: A device for crystal growth is provided with at least a growth chamber 1 that can be exhausted to ultra-high vacuum, a substrate holder 2 that is placed in the growth chamber 1 to hold a growing substrate 3, a crucible 41 that is placed in the growth chamber 1 and provided with an angle-setting means which is for setting the surface of a plate-like raw material 6 acting as an evaporation source at a specified angle, and a heater 5 that is placed near the crucible 41 in the growth chamber 1 to heat the crucible 41, and so constituted that an angleθmade by the surface of the growing substrate 3 and that of the plate-like raw material 6 is within 22 degree.
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