| 摘要 |
PROBLEM TO BE SOLVED: To manufacture low-resistivity source and gate lines by using a non- treatment glass substrate, and by providing the non-treatment glass substrate onto a conductor line LCD glass panel made of pure aluminum with low resistivity while decreasing Hillock density after the deposit of a surface dielectric layer. SOLUTION: A titanium foundation layer 14 is formed on a glass substrate 10, and an aluminum layer 20 is formed on the titanium foundation layer 14 for composing a conductor 50. On the conductor 50 and the substrate 10, a process called a plasma increased speed chemical vapor growth method is used in a process chamber 56, and a surface dielectric layer 60 made of silicon nitride (SiNx) is deposited. After that, a Hillock density of 1×105 is sufficiently reduced, and at the same time a conductor line made of pure aluminum with a lower resistivity is provided, thus manufacturing a source line with low resistivity.
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