VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE, MANUFACTURE THEREOF, AND POWER CONVERSION DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To manufacture a voltage controlled semiconductor device of high breakdown strength, low on-resistance, and low noise by forming a gate electrode and a second electrode for a semiconductor substrate, respectively, in a surface voltage control gate semiconductor region or gate contact semiconductor region of either first or second conductivity type. SOLUTION: An n-type SiC drift layer 2 of low-impurity concentration is formed on an n-type SiC drain region 1 of high-impurity concentration. A rectangular p-type SiC embedded voltage control gate semiconductor region 5 is formed in the region at both end parts except for the central part on the upper surface of the drift layer 2. The embedded voltage control gate semiconductor region 5 and a p-type surface voltage control gate semiconductor region 16 formed over it are connected, and a gate electrode 23 is formed in the region 16 and a gate contact region 6, respectively, with a second electrode 21 formed on the opposite side of the drift layer 2.