| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a CMOS device on a semiconductor substrate. SOLUTION: This method includes a process 216 wherein conductive material having one work function is so formed as to cover an insulated semiconductor substrate, and a process 218 wherein part of the conductive material is reformed to change the work function of the conductive material, a first gate electrode is formed with the conductive material, and a second gate electrode is formed with the reformed part of the conductive material. A first transistor is an NMOS device, a second transistor is a PMOS device, and a CMOS device is constituted of the first and the second transistor. The conductive material includes a conductor selected among Ta, Mo, Ti and any given combination of these elements. The process for reforming the conductive material includes a process wherein part of the conductive material is exposed to plasma including gases such as nitrogen gas.
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