| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate driving system of high reliability which can make good use of high frequency operation of an insulated gate semiconductor device and drives stably a power conversion device like an inverter. SOLUTION: This gate circuit comprises a positive and a negative control power sources P, N, a first and a second semiconductor device groups A, B in which a plurality of semiconductor devices 12, 13, 15, 16 are connected in series between the power sources P and N, a switching signal source 17 supplying an ON/OFF control signal to the semiconductor devices 12, 13, 15, 16 in the first and the second semiconductor device groups A, B, and delay circuits 18, 19 for applying a specified time delay to the ON/OFF signal which is supplied to the semiconductor devices 12, 13, 15, 16 in either one out of the first and the second semiconductor device groups A, B.
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