| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the temperature coefficient of on-voltage is positive and the switching speed is high in current density in actual operation. SOLUTION: A p-anode layer 1 is formed on one surface of a high-resistance n-base layer 3, and an n-cathode layer 2 is formed on the other surface. The surface of the p-anode layer 1 is covered with an insulation film where a contact hole is opened, an anode electrode 5 is formed on it, and the anode electrode 5 is sealed to the p-anode layer 1 at a contact hole 7. A cathode electrode 6 is formed on the n-cathode layer 2. Also, the flat-surface pattern of the contact hole 7 is in a stripe shape. By setting a ratio S1/S2 of an area (the area of a non-sealed part) S1 occupied by an insulation film 4 on the p-anode layer 1 to an area S2 (the area of a sealed part) S2 of the contact hole 7 to 30 or less, the temperature coefficient of on-voltage can be made positive. Also, by controlling life time, a switching speed can be increased.
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