| 摘要 |
PROBLEM TO BE SOLVED: To improve throughput in an electron beam inspection device while the high detecting sensitivity of the device is maintained. SOLUTION: An electron beam inspection device deflects secondary electrons accelerated to 10-20 kV synchronously to the two-dimensional scanning of a primary electron beam 1 by means of an auxiliary deflector 21 composed of a high-speed electrostatic deflector. By the deflection of the secondary electrons, one of detectors 20a-20n is selected correspondingly to the scanning position of the primary electron beam 1. When the number of the detectors 20a-20n is 512 and the signals of one scanning line of the electron beam 1 on a wafer sample 3 are 512 points, 512 points of secondary electron signals are respectively individually detected by the detectors 20a-20n. This means that the scanning speed of the electron beam 1 and, accordingly, the inspection throughput of the electron beam inspection device can be increased 512 times.
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