| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device using a trench type element separation wherein the word line interval sandwiching a source line is minimized to cause no such problem as the resistance rise of the source line. SOLUTION: Trench element separation region 16 is so formed as to define an active region on a semiconductor substrate 2, and a drain diffusion layer is so formed as to be sandwiched between the trench element separation regions 16. A charge accumulation layer 20 for capacity coupling to the active region is formed on the active region through a first gate insulating film 18, a control gate 24 for capacity coupling to the charge accumulation layer 20 is formed on the charge accumulation layer 20 through a second gate insulating film 22, and a source diffusion layer 8 is formed on the opposite side of the drain diffusion layer to the control gate 24. The edge on a source diffusion layer 8 side of the trench element separation region 16 almost agrees with that of the charge accumulation layer 20 and control gate 24, with the source diffusion layer 8 formed flat without bending in the semiconductor substrate 2.
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