| 摘要 |
PROBLEM TO BE SOLVED: To accurately control the pressure in a vacuum chamber to be suitable for a process. SOLUTION: Related to the pressure control method, a vacuum chamber 1 is supplied with a reactive gas while applied with a high-frequency energy to generate a plasma 8, and with the plasma 8, the impedance of the plasma 8 is measured by an impedance measuring means 19 through a probe 16 during etching of a semiconductor wafer 3 provided in the vacuum chamber 1, and a pressure P in the vacuum chamber 1 is acquired by a pressure calculating means 20 based on a time-series change of the impedance, and based on the pressure P, the pressure in the vacuum chamber 1 is controlled by a pressure control means 21.
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