MANUFACTURE OF SILICON THIN-FILM PHOTOELECTRIC CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture a silicon thin-film photoelectric conversion device where photoelectric conversion efficiency is improved by reducing the dopant concentration of an upper conductivity type layer formed on a photoelectric conversion layer. SOLUTION: When a silicon thin-film photoelectric conversion device is to be formed on a substrate 1 by forming a reverse-side electrode 10, and a silicon thin-film photoelectric conversion unit 11 including a lower conductivity type layer 111, an essentially genuine semiconductor crystalline silicon photoelectric conversion layer 112 and an upper silicon thin-film photoelectric conversion unit 11, and a transparent electrode, a process for forming the crystalline silicon photoelectric conversion layer 112 by the plasma CVD method and a process for forming an upper conductivity type layer 113 by applying an ultraviolet pulse laser beam in an atmosphere containing a dopant and hence mixing the dopant into the crystalline silicon photoelectric conversion layer 112 are provided.