| 摘要 |
<p>An inorganic insulation film (103) consisting of SiC is formed on a fluoride-added carbon film (102) by a chemical vapor growth method using SiF4 and C2H4 as a source gas. Use of SiF4 and CF4 not containing hydrogen (H) as a source gas can prevent H from being brought into the inorganic insulation film (103) forming a hard mask (113); therefore, H diffused outward from the inorganic film (103) combines with fluorine (F) in the fluorine-added carbon film (102) to form HF, which HF prevents the corrosion of the inorganic film (103) and the like. Accordingly, adhesiveness between the hard mask (113) formed of the inorganic insulation film (103) and another layer such as the fluorine-added carbon film (102) can be prevented from deteriorating.</p> |
