发明名称 |
PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING ANTIREFLECTIVE ETCH STOP LAYER |
摘要 |
<p>A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.</p> |
申请公布号 |
EP1034564(A1) |
申请公布日期 |
2000.09.13 |
申请号 |
EP19980943453 |
申请日期 |
1998.08.28 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
WANG, FEI;FOOTE, DAVID, K.;CAGAN, MYRON, R.;GUPTA, SUBHASH |
分类号 |
H01L21/28;H01L21/027;H01L21/312;H01L21/314;H01L21/318;H01L21/336;H01L21/768;H01L21/8244;H01L23/522;H01L27/11;H01L29/78;(IPC1-7):H01L21/314 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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