| 摘要 |
The method for making a local opening in metallic layer (6) formed on one side of a wafer having at least one lateral mark on peripheral edge and at least one surface marking (8) on the surface (4) of silicon base (2) covered with oxide layer (5), comprises the bearing location of coordinates of the initial position of a tool (14) carried by an apparatus (15) relative to the peripheral edge and lateral mark of the wafer. The computation of the position coordinates of the surface marking relative to the initial position of the tool in a manner to determine the path from the original position to the working position situated above the surface marking, the running of the tool along the path for installing in the working position, and the activation of tool for attacking the metallic layer (6) and making the required opening above the surface marking (8). The procedure also comprises a local displacement of the tool relative to the surface of wafer in the zone of working position, in the course of attacking the metallic layer. The procedure also includes an operation of cleaning the surface of wafer, after making the required opening. The procedure includes putting a drop of products of selective attack on metal in contact with the surface of wafer by aid of the tool in the working position. The method includes the creation of opening in the metallic layer by an action of laser beam exciting a selective photo-ablation of metal, or by selective mechanical or mechanical-chemical polishing of metallic layer by aid of a polishing head and products of attack. The device comprises the means for the detection of lateral mark, which is in the form of a notch, and of at least one spot zone on peripheral edge for constituting the reference bearing, the tool (14) for attacking the metallic layer and carried by an apparatus as means for displacement, and the apparatus (15) for determination of path and control of displacement to position the tool above the surface marking. |
