| 发明名称 |
A process for fabricating a device with shallow junctions |
| 摘要 |
<p>A process for device fabrication is disclosed. In the process a dielectric layer is formed by thermal oxidation of a semiconductor substrate that has been damaged by ion implantation. The concentration of the implanted ions is about 6 x 10<16>/cm<3> to about 3 x 10<21>/cm<3>. The ions are either a dopant, a non-dopant, or a combination of non-dopant. The dielectric layer formed on the damaged substrate has improved lifetime and reliability compared with dielectric layers that are not damaged to the same extent by ion implantation.</p> |
| 申请公布号 |
EP1035567(A2) |
申请公布日期 |
2000.09.13 |
| 申请号 |
EP20000301572 |
申请日期 |
2000.02.28 |
| 申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
BUDE, JEFFREY DEVIN;SILVERMAN, PAUL JOSEPH;VUONG, THI-HONG-HA |
| 分类号 |
H01L21/8247;H01L21/265;H01L21/28;H01L21/316;H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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