发明名称 |
Method of manufacturing semiconductor device including high-temperature heat treatment |
摘要 |
<p>A method of manufacturing a semiconductor device capable of suppressing increase of a leakage current resulting from a high-temperature heat treatment is obtained. In this manufacturing method, an impurity region is formed by selectively ion-implanting an impurity into the main surface of a semiconductor substrate. The impurity region is activated by performing a high-temperature heat treatment. The semiconductor device is recovered from crystal defects resulting from the high-temperature heat treatment by performing a low-temperature heat treatment after performing the high-temperature heat treatment. According to this manufacturing method, the semiconductor device is recovered from the crystal defects resulting from the ion implantation by the high-temperature heat treatment, and recovered from the crystal defects resulting from the high-temperature heat treatment by the low-temperature heat treatment. Thus, increase of a leakage current caused by the crystal defects resulting from the high-temperature heat treatment can be effectively prevented. <IMAGE></p> |
申请公布号 |
EP1035565(A2) |
申请公布日期 |
2000.09.13 |
申请号 |
EP20000301383 |
申请日期 |
2000.02.22 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
SASADA, KAZUHIRO;INOUE, YASUNORI;TANIMOTO, SHINICHI;NISHIDA, ATSHUHIRO;IBARA, YOSHIKAZU |
分类号 |
H01L29/78;H01L21/265;H01L21/28;H01L21/324;H01L21/336;H01L21/8234;(IPC1-7):H01L21/265;H01L21/823 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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