MIS SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a MIS semiconductor device and a manufacturing method with reliability and simple manufacturing technique without a problem of a gate depletion phenomenon. SOLUTION: A gate electrode made of only a metallic silicide film 9 is formed on a semiconductor substrate. Polysilicon for a gate electrode is selectively formed on a gate insulating film 2. Spacers 5 are formed on both sides thereof and source/drain regions are formed on the surface of the substrate. The upper face of the polysilicon is covered with metallic material with thickness enough to make all the polysilicon in a silicide state, and all the polysilicon is substituted into a metallic silicide film 9 in a heat treatment step. Then, the source/drain part SD1 is changed into a silicide state through the covering metallic material. At the same time the source/drain part SD1 contains the metallic silicide film 9 so that a salicide structure is realized.