| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP polishing pad excellent in heat resistance and providing a wafer excellent in thickness uniformity with small step difference between an insulating film and a metallic layer. SOLUTION: This polishing pad is used to polish a wafer by pressing the polishing pad to the wafer surface and rotating a spindle of a wafer chucking mechanism and a spindle of the polishing pad to slidingly rub the rotating polishing pad against the rotating wafer surface. In this case, a resin surface layer, slidingly rubbing against the wafer surface, of the polishing pad contains 5-50 wt.% of boehmite abrasive grain of 0.1 μm or less in grain diameter. |
