Alignment and exposure process utilizing split beam for exposure and alignment

摘要

An alignment and exposure process that use the same incident beam. A substrate having a photoresist formed on an upper surface of the substrate is provided. At least one alignment mark is located on a bottom surface of the substrate. A mask is located over the photoresist. An incident beam is projected onto a light splitter over the mask, wherein the incident beam is reflected onto the alignment mark to align the mask with the substrate. The first light is split into a transmission light and a reflection light. The transmission light passes through the light splitter and the mask to expose the photoresist and the reflection light is projected onto the alignment mark to dynamically align the mask with the substrate.