发明名称 |
Double density non-volatile memory cells |
摘要 |
Double density non-volatile memory cells having a trench structure are formed in a substrate, thereby facilitating miniaturization, improved planarization and low power programming and erasing. Each double density cell comprises two floating gates and a common control gate. Each pair of double density cells shares a common source region. Embodiments include forming first and second trenches in a substrate and depositing a tunnel dielectric layer in each trench. Polycrystalline silicon is then deposited filling each trench and a hole is etched forming two floating gate electrodes in each trench. An interpoly dielectric layer is then formed and a substantially T-shaped control gate electrode is deposited filling the hole between the floating gates and extending on the substrate.
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申请公布号 |
US6118147(A) |
申请公布日期 |
2000.09.12 |
申请号 |
US19980110446 |
申请日期 |
1998.07.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIU, YOWJUANG W. |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L29/76;H01L29/88 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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