发明名称 GROWING OF WAVELENGTH-CONVERTING CRYSTAL AND CRYSTAL PREPARED THEREFROM
摘要 <p>PROBLEM TO BE SOLVED: To prevent loss threshold of crystal from lowering without taking minute scattering bodies in crystal or without producing permeation loss of incident light and SHG light. SOLUTION: In this method for growing a wavelength-converting crystal by using a seed crystal 10 cut out in a specific phase matching direction, dried gas having <=10% relative humidity is made to flow into a growing furnace 20 during growth so that the dried gas strikes melt 21a. Specifically, the wavelength-converting crystal is lithium tetraborate and the seed crystal is cut out in phase matching direction inclined by 74±5 degree from (c) axis and grown into the wavelength converting crystal, which method is suitable for a Czochralski method using 5 times wave of Nd:YA laser. The dried gas is preferably dried air, dried argon or dried nitrogen.</p>
申请公布号 JP2000247791(A) 申请公布日期 2000.09.12
申请号 JP19990049666 申请日期 1999.02.26
申请人 MITSUBISHI MATERIALS CORP 发明人 SUGAWARA TAMOTSU
分类号 C30B29/22;C30B15/00;C30B15/36;G02F1/35;G02F1/355;(IPC1-7):C30B29/22 主分类号 C30B29/22
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