发明名称 |
Deposition of super thin PECVD SiO2 in multiple deposition station system |
摘要 |
The present invention provides a method and system for depositing an oxide layer onto a semiconductor device during fabrication by using a deposition chamber, the method comprising the steps of providing a temperature of less than approximately 450 degrees Celsius in the deposition chamber; allowing the semiconductor wafer to soak up the temperature of less than approximately 450 degrees Celsius for approximately 30 seconds; and depositing a layer of oxide onto a semiconductor wafer, wherein a thickness of the oxide layer is not greater than approximately 200 Angstroms.
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申请公布号 |
US6117799(A) |
申请公布日期 |
2000.09.12 |
申请号 |
US19990337696 |
申请日期 |
1999.06.21 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO, MINH VAN |
分类号 |
C23C16/40;H01L21/314;H01L21/316;H01L21/336;(IPC1-7):H01L21/02 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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