| 摘要 |
Apparatus for use in ESD circuitry are provided that comprise a substrate layer on a dielectric wherein the substrate layer includes a first geometric region comprising alternating regions of first and second conductivity types, a second geometric region of substantially one conductivity type surrounding the first geometric region and a third geometric region of substantially one conductivity type surrounding the second geometric region. The substrate layer further includes at least one dielectric layer on at least the second geometric region and a gate layer on the dielectric layer, over the second geometric region and over at least a portion of the second geometric region that is adjacent the alternating first and second conductivity type regions. In a first aspect of the invention, the alternating first and second conductivity type regions preferably are abutted, and a salicide layer may be employed to coupled together adjacent first and second conductivity type regions if desired. In a second and a third aspect of the invention, the alternating first and second conductivity type regions preferably are separated by shallow trench isolation regions or by polysilicon regions, respectively. The at least one dielectric layer may be thicker in at least one portion of the second geometric region than in another portion of the second geometric region. An ASIC book may be formed from one or more of the apparatus.
|
