发明名称 |
Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint |
摘要 |
A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a ligand is disclosed. One step of the method includes polishing a first side of the wafer in order to remove the ligand from the wafer. Another step of the method includes determining that a chelating agent has bound the ligand due to the polishing step removing the ligand of the polishing endpoint layer. The method also includes the step of terminating the polishing step in response to determining that the chelating agent has bound the ligand. A polishing system is also disclosed which detects a polishing endpoint based upon a chelating agent binding a ligand of a polishing endpoint layer of a semiconductor device.
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申请公布号 |
US6117779(A) |
申请公布日期 |
2000.09.12 |
申请号 |
US19980212503 |
申请日期 |
1998.12.15 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
SHELTON, GAIL D.;MILLER, GAYLE W. |
分类号 |
B24B37/04;B24B49/04;H01L21/3105;(IPC1-7):H01L21/461;H01L21/302 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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