发明名称 |
Trench isolation process using nitrogen preconditioning to reduce crystal defects |
摘要 |
A method of forming a trench isolation structure in a semiconductor substrate. After etching a trench into the semiconductor substrate, an oxide layer is formed within the trench. The surface of this oxide layer is subject to a nitrogen plasma. Subsequently, another oxide layer is deposited over the nitrogen-rich surface of the first oxide layer. Deposition of this second oxide layer is accomplished by a chemical vapor deposition (CVD) process primarily using a reactant gas other than ozone.
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申请公布号 |
US6118168(A) |
申请公布日期 |
2000.09.12 |
申请号 |
US19970997247 |
申请日期 |
1997.12.23 |
申请人 |
INTEL CORPORATION |
发明人 |
MOON, PETER K.;KRICK, DAVID T.;SPURGIN, KERRY L. |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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