| 摘要 |
A cleaning method for a semiconductor substrate is provided. After pure water is supplied to a cleaning tank, a chlorine gas is supplied to the pure water to thereby generate chloride ions, hypochlorite ions, chlorite ions, and chlorate ions in the pure water. Then, a semiconductor substrate is immersed into the pure water containing the chloride ions, hypochlorite ions, chlorite ions, and chlorate ions. The fabrication cost of a semiconductor device and adverse effects on the earth environment can be reduced. The concentration of the dissolved chlorine gas in the pure water is preferably in the range from 0.003 to 0.3% by weight.
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