| 摘要 |
PROBLEM TO BE SOLVED: To reduce the internal stress of a thin film and to evade the deformation of a substrate and the peeling of the thin film by the action of tensile force by allowing an element having an ion radius smaller than that of oxygen such as nitrogen to coexist in a silicon dioxide thin film formed by arc discharge type ion plating or the like. SOLUTION: At the time of forming a silicon dioxide on a substrate by a vapor deposition method, an element having an ion radius smaller than that of oxygen having 1.40Åion radius such as nitrogen having 1.06Åion radius is introduced into the film. In this way, the tensile stress of the silicon dioxide film is reduced. This low film stress silicon dioxide thin film having high performance can be formed, e.g. by using an arc discharge type ion plating device, using silicon monoxide as the evaporating material and introducing oxygen and nitrogen as reaction gases therein. The ratio of the flow rates of oxygen and nitrogen as reaction gas is preferably controlled to 10:(1 to 5). In this way, the internal stress of the film can easily be reduced.
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