| 摘要 |
PROBLEM TO BE SOLVED: To obtain a compound semiconductor substrate that can form a high- resistant compound semiconductor buffer layer of reduced crystal defect on an Si substrate and can provide high-frequency devices, for example, ESFET, HEMT, or the like, of good properties formed thereon. SOLUTION: In a compound semiconductor substrate that is formed by laminating lower buffer layers 2, 3 and upper buffer layer 6 on an Si substrate 1, an intermediate layer 5 made of InxAl1-xAs where the In composition (x) is a composition of 0<x<=0.3 and the layer thickness is 0.05-0.2μm is formed between the lower buffer layer 3 and the upper buffer layer 6.
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