SILICON SUBSTRATE AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To obtain a silicon substrate on which an insulating single crystalline oxide layer having high crystallinity and good surface smoothness is laminated. SOLUTION: This silicon substrate 1 on which an insulating single crystalline oxide layer is laminated has surface smoothness represented by RRMS value within the range of 1Åto 10Å. The method for producing silicon substrate on which the insulating single crystalline oxide layer is laminated has a step for depositing a silicon oxide layer 2 on the silicon substrate, a step for further depositing an Al layer 3 on the silicon oxide layer 2 and a step for providing an insulating single crystalline oxide layer by heat-treating the laminate comprising the silicon substrate, the silicon oxide layer and Al layer.