发明名称 |
METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus therefor for producing a single crystal, intended to diminish defects tending to be introduced thereinto. SOLUTION: This method comprises providing a pair of upper and lower circular coils 17, 18 for applying a cusped magnetic field to a silicon melt 27 in a crucible 11 and pulling a silicon single crystal 31 from the silicon melt 27 while applying the magnetic field to the melt 27, wherein respective electric currents to be applied to the pair of circular coils 17, 18 are controlled individually to control the magnetic field intensity on the crystal growth surface 32 nearly at a constant level.
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申请公布号 |
JP2000247787(A) |
申请公布日期 |
2000.09.12 |
申请号 |
JP19990047988 |
申请日期 |
1999.02.25 |
申请人 |
TOSHIBA CORP;TOSHIBA CERAMICS CO LTD |
发明人 |
NAKAGAWA YASUTADA;NISHIMURA TETSUO;SUZUKI OSAMU;KOBAYASHI NORIO |
分类号 |
C30B29/06;(IPC1-7):C30B29/06 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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