发明名称 |
CMOS sensor |
摘要 |
A CMOS sensor structure and method of manufacture that includes the fabrication of a special shallow trench isolation structure. Besides isolating the active region for forming the CMOS sensor device, the shallow trench isolation structure has a special reflective plug embedded inside capable of reflecting incoming light onto the sensitive region of the CMOS sensor. Hence, the interactive length of incoming light with the light sensitive region can be increased, thereby increasing the contrast ratio and light sensitivity of the CMOS sensor.
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申请公布号 |
US6118142(A) |
申请公布日期 |
2000.09.12 |
申请号 |
US19980189354 |
申请日期 |
1998.11.09 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN, MING-I;FAN, YUNG-CHIEH |
分类号 |
H01L21/762;H01L27/146;(IPC1-7):H01L27/148;H01L29/768 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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