| 摘要 |
A nonvolatile ferroelectric memory having a pair of split word lines rather than a word line and a plate line simplifies the manufacturing process and allows high density integration. The memory includes a first and second transistors, each having a source, a drain and a gate. The gate of the first and second transistors are coupled to the corresponding split word lines. A first ferroelectric capacitor has an electrode connected to the source of the first transistor and the other electrode is connected to one of the split word lines coupled to the gate of the first transistor. A second ferroelectric capacitor has an electrode connected to the source of the second transistor and the other electrode is connected to the other split word line which is coupled to the first of the second transistor.
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