发明名称 Process for forming a microstructure in a substrate of a ferroelectric single crystal
摘要 A process for forming a microstructure at a surface of a substrate made of a ferroelectric single crystal, includes the steps of subjecting the substrate to a single-poling treatment, thereby one of an etching-easy surface and an etching-difficult surface being exposed to one of main faces of the substrate, while the other being exposed to the other main face, forming a domain-inverted region in at least one of the main faces of the substrate, and forming the microstructure at the substrate in the domain-inverted region of the substrate by selectively etching the substrate.
申请公布号 US6117346(A) 申请公布日期 2000.09.12
申请号 US19980033733 申请日期 1998.03.03
申请人 NGK INSULATORS, LTD. 发明人 KAWAGUCHI, TATSUO;IMAEDA, MINORU
分类号 G02B6/13;C30B29/30;C30B33/00;C30B33/10;G02F1/355;G02F1/37;(IPC1-7):G02B6/01 主分类号 G02B6/13
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