发明名称 |
Method and apparatus for blanket aluminum CVD on spherical integrated circuits |
摘要 |
A method and apparatus for metal-organics chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method includes pretreating the spherical substrate with a vapor of a first precursor in preparation for a deposition of a metal layer. The pretreated spherical substrate is then exposed to a thermally dissociated precursor of metal for depositing the metal layer onto the spherical substrate, wherein the exposure to the thermally dissociated precursor of metal provides a uniformly deposited metal layer coverage over the pretreated spherical substrate. The deposited metal layer is then annealed and cooled.
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申请公布号 |
US6117772(A) |
申请公布日期 |
2000.09.12 |
申请号 |
US19980113671 |
申请日期 |
1998.07.10 |
申请人 |
BALL SEMICONDUCTOR, INC. |
发明人 |
MURZIN, IVAN HERMAN;SAKUMA, TOSHIYUKI;TAPIAWALA, AJAY |
分类号 |
H01L21/285;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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