| 摘要 |
PROBLEM TO BE SOLVED: To prepare an electrification-reducing membrane capable of reducing undesirable influences on emitted electrons, hardly varying electric resistance, excellent in stability and reproducibility and useful for an image formation device, or the like, by making a nitride of both a transition metal and silicon, obtained under a specific condition, exist in the membrane. SOLUTION: This membrane is prepared by making a nitride of both a transition metal and silicon which is obtained by sputtering a target made of both at least one transition metal selected from the group consisting of Cr, Ti, Ta, Mo and W and silicon (or silicon nitride) exist in the membrane itself. The surface nitrification degree of silicon, i.e., the weight ratio of (silicon nitride/silicon) in the nitride is >=60%. It is preferable to produce an image formation device containing both emissive elements and image formation members in an envelope and a spacer containing an electrification-reducing membrane having 10 nm-1μm thickness, 10-7×Va2-105Ωm resistivity and <=1% absolute value of negative temperature coefficient of resistance on the surface of a substrate material.
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