| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method for forming a thin layer of single crystal on an amorphous base layer by the micro-channel epitaxy technique based on the vapor growth method. SOLUTION: An amorphous thin layer 2 is formed on a single crystal substrate. Then, linear opening 3 is formed on the amorphous thin layer by etching to allow the surface of the single crystal substrate to be exposed. Under reduced pressure, molecular beams are injected to the surface of the single crystal substrate at an incident angle of <=40 deg. to effect the epitaxy growth of a single crystal thin layer 8 on the surface of the single crystal substrate exposed at the opening 3. Then, the single crystal thin layer 8 is allowed to grow in the upright direction, subsequently the thin layer is allowed to grow in the horizontal direction on the amorphous thin layer 2 to form a transverse single crystal thin layer 9.
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